Laser-zone growth in a Ribbon-to-Ribbon (RTR) process silicon sheet growth developnent for the large area silicon sheet task of the Low Cost Silicon Solar Array Project. Quarterly report

Technical Report · Wed Jun 01 00:00:00 EDT 1977

OSTI ID:5202732

Gurtler, R W; Baghdadi, A; Wise, J; Ellis, R J

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth was investigated. An existing RTR apparatus, RTR 1, was upgraded to allow for 5 cm wide ribbon growth with a finite stroke length of at least 15 cm. A second RTR apparatus, RTR 2, was designed, built, and operated which utilizes continuous feed mechanisms and allows continuous growth of 7.5 cm wide ribbons. RTR 2 includes development and utilization of advanced beam scanning (or shaping), high power lasers, and thermal profile modification elements to attain maximum growth velocities (with a design goal of 18 cm/min). Materials studies, process development, and thermal analyses are also described. Residual stresses and dislocation densities were minimized through theoretical and experimental efforts towards optimization of thermal profiles. Growth runs were performed on RTR 2 and solar cells were fabricated which demonstrated efficiencies greater than 10%.

• Research Organization: Motorola, Inc., Phoenix, Ariz. (USA). Semiconductor Group
• DOE Contract Number: NAS7-100; JPL-954376
• OSTI ID: 5202732
• Report Number(s): N-77-27504; NASA-CR-153908; REPT-2256/6
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
CRYSTAL GROWTH
DISLOCATIONS
FABRICATION
MODIFICATIONS
OPTIMIZATION
SHEETS
SILICON SOLAR CELLS
TEST FACILITIES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
LINE DEFECTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion