Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications. Final report, 6 August 1987-9 June 1989

Technical Report · Fri Sep 01 00:00:00 EDT 1989

OSTI ID:5201368

Palfrey, S L; Enstrom, R E; Longeway, P A

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

• Research Organization: David Sarnoff Research Center, Princeton, NJ (USA)
• OSTI ID: 5201368
• Report Number(s): N-89-28821; NASA-CR-181870; NAS-1.26:181870
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
CHEMICAL VAPOR DEPOSITION
DESIGN
OPTICAL PROPERTIES
FABRICATION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PROGRESS REPORT
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
DOCUMENT TYPES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)