Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications. Final report, 6 August 1987-9 June 1989
A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.
- Research Organization:
- David Sarnoff Research Center, Princeton, NJ (USA)
- OSTI ID:
- 5201368
- Report Number(s):
- N-89-28821; NASA-CR--181870; NAS--1.26:181870
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
DOCUMENT TYPES
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PROGRESS REPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
WAVEGUIDES