Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical results

Journal Article · Sun Jan 15 04:00:00 EST 1978 · Phys. Rev., B; (United States)

DOI:https://doi.org/10.1103/PhysRevB.17.690· OSTI ID:5200934

Feibelman, P J; McGuire, E J

A reduced version of the independent-electron theory of Auger line shapes is given that takes advantage of the general smallness of those components of a solid's local density of states (LDOS) matrix which are off-diagonal in angular momentum. Thus we present approximate formulae which relate the valence-band Auger line shapes of a solid simply to its angular-momentum projected LDOS near a surface. Using these simplified formulae, we have located and corrected a number of numerical errors in our previous calculations of the Auger line shapes of Si. We present corrected results here, showing that the independent-electron theory, coupled with the use of atomic Auger matrix elements for Si, actually predicts too large a probability of L/sub 2,3/M/sub 1/M/sub 2,3/ decay relative to that for L/sub 2,3/M/sub 2,3/M/sub 2,3/ decay to give good agreement with measured Si L/sub 2,3/VV Auger line shapes. Possible reasons for the experimental smallness of the L/sub 2,3/M/sub 1/M/sub 2,3/ Auger decay rate are discussed. The Si L/sub 1/L/sub 2,3/V Coster-Kronig line is also recalculated and shown to be in correspondence with the simplified theory of Auger transitions.

• Research Organization: Sandia Laboratories, Albuquerque, New Mexico 87115
• OSTI ID: 5200934
• Journal Information: Phys. Rev., B; (United States), Journal Name: Phys. Rev., B; (United States) Vol. 17:2; ISSN PLRBA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AUGER EFFECT
AUGER ELECTRON SPECTROSCOPY
COSTER-KRONIG TRANSITIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
ENERGY-LEVEL TRANSITIONS
FREE ENERGY
LINE WIDTHS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE ENERGY
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES