Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980

Technical Report · Sat Mar 01 04:00:00 EST 1980

DOI:https://doi.org/10.2172/5198313· OSTI ID:5198313

Yaws, C. L.; Li, K. Y.

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are reported for primary activities of base case conditions (30%), reaction chemistry (25%) and process flow diagram (20%). Discussions with HSC and construction of a process flow diagram are in progress. Preliminary economic analysis of the BCL process (case B) was completed. Cost analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon. Fixed capital investment for the plant is $14.35 million (1980 dollars) and product cost without profit is 11.08 $/kg of silicon (1980 dollars). Cost sensitivity analysis indicate that the product cost is influenced most by plant investment and least by labor. For profitability, a sales price of 14 $/kg (1980 dollars) gives a 14% DCF rate of return on investment after taxes.

• Research Organization: Lamar Univ., Beaumont, TX (USA). Dept. of Chemical Engineering
• DOE Contract Number: NAS-7-100-954343
• OSTI ID: 5198313
• Report Number(s): DOE/JPL/954343-80/18
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COST
CRYOGENIC FLUIDS
DATA
DATA FORMS
DEPOSITION
ECONOMIC ANALYSIS
ECONOMICS
ELEMENTS
ENTHALPY
FLUIDS
GRAPHS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INDUSTRIAL PLANTS
INFORMATION
INVESTMENT
NONMETALS
PHYSICAL PROPERTIES
PRICES
PRODUCTION
REDUCTION
SEMIMETALS
SENSITIVITY ANALYSIS
SILANES
SILICON
SILICON COMPOUNDS
SPECIFIC HEAT
SUBLIMATION HEAT
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSITION HEAT
VAPOR PRESSURE
VAPORIZATION HEAT