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Extension of the bi-epitaxial Josephson junction process to various substrates

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106411· OSTI ID:5197641
; ; ;  [1]
  1. Conductus, Inc., 969 West Maude Avenue, Sunnyvale, California (USA)
We report an extension of the bi-epitaxial Josephson junction process that permits the use of a variety of substrate materials and allows junctions to be placed at any level of a multilayer structure. The new materials, SrTiO{sub 3}, MgO, and CeO{sub 2}, serve as a base layer, a seed layer, and a buffer layer, respectively, and replace Al{sub 2}O{sub 3}, MgO, and SrTiO{sub 3} in the original bi-epitaxial process. This new process offers much more flexibility in designing a circuit. Bi-epitaxial junctions made with the new set of materials show much improved electrical properties, especially at 77 K. We attribute the improved electrical characteristics to a better thermal expansion match between the substrate and the thin-film layers. Important junction properties such as critical currents and junction resistances are compared to other types of grain boundary junctions.
OSTI ID:
5197641
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:17; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English