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Title: Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983

Abstract

Recent reported results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Most of the studies have been performed on very small grain or short minority-carrier diffusion length silicon. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is 20 to 40 mV less. The goal of this program is to minimize the variations in open-circuit voltage and fill-factor that are caused by structural defects by passivating these defects using a hydrogenation process.

Authors:
Publication Date:
Research Org.:
Solarex Corp., Rockville, MD (USA)
OSTI Identifier:
5192174
Report Number(s):
DOE/JPL/956698-84/1
ON: DE84009314
DOE Contract Number:  
NAS-7-100-956698
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; PASSIVATION; PERFORMANCE; DIFFUSION LENGTH; ELECTRIC POTENTIAL; HYDROGEN; POLYCRYSTALS; CRYSTALS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; LENGTH; NONMETALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360600 - Other Materials

Citation Formats

Culik, J. S.. Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983. United States: N. p., 1984. Web. doi:10.2172/5192174.
Culik, J. S.. Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983. United States. https://doi.org/10.2172/5192174
Culik, J. S.. 1984. "Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983". United States. https://doi.org/10.2172/5192174. https://www.osti.gov/servlets/purl/5192174.
@article{osti_5192174,
title = {Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983},
author = {Culik, J. S.},
abstractNote = {Recent reported results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Most of the studies have been performed on very small grain or short minority-carrier diffusion length silicon. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is 20 to 40 mV less. The goal of this program is to minimize the variations in open-circuit voltage and fill-factor that are caused by structural defects by passivating these defects using a hydrogenation process.},
doi = {10.2172/5192174},
url = {https://www.osti.gov/biblio/5192174}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}