Clusters formed in laser-induced ablation of Si, SiC, Pt, UO sub 2 and evaporation of UO sub 2 observed by laser ionization time-of-flight mass spectrometry and scanning tunneling microscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:5191286

Tench, R J; Balooch, M; Bernardez, L; Allen, M J; Siekhaus, W J ^[1]; Olander, D R; Wang, W ^[2]

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1. Lawrence Livermore National Lab., Livermore, CA (United States)
2. Univ. of California, Berkeley (United States)

Cluster formation is traditionally observed by mass spectrometry, which has the disadvantage that the detection sensitivity often decreases with increasing mass. Alternatively, one may collect the clusters onto an atomically flat substrate and identify them by scanning tunneling microscopy (STM). Both techniques were used here. For the first technique, a Nd:YAG laser (frequency quadrupled to 266 nm, 5 ns pulse width) focused onto spots of 4-100 {mu} diameter was used to ablate refractory materials, and a reflectron time-of-flight tube served to mass-analyze the plumes. The observed mass spectra for Si, Pt, SiC, and UO{sub 2} varied in the distribution of ablation products among atoms, molecules, and clusters, depending on laser power density and target material. For the second technique, cleaved surfaces of highly oriented pyrolytic graphite were positioned either 10 cm away from materials ablated at 10{sup {minus}8} Torr by 1-3 excimer laser (308 nm) pulses of 20 ns duration, or 1 m away from materials vaporized at 10{sup {minus}8} Torr by 10 Nd:Glass laser pulses of 1 ms duration. The deposited material was then analyzed by STM in air. Clusters up to 30 {angstrom} in diameter were observed for all materials, making the use of STM at room temperature for mass analysis questionable.

• DOE Contract Number: W-7405-ENG-48; AC03-76SF00098
• OSTI ID: 5191286
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

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ABLATION
ACTINIDE COMPOUNDS
CARBIDES
CARBON
CARBON COMPOUNDS
CHALCOGENIDES
ELEMENTAL MINERALS
ELEMENTS
GRAPHITE
LASER SPECTROSCOPY
MASS SPECTRA
METALS
MICROSCOPY
MINERALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PLATINUM
PLATINUM METALS
REFRACTORIES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
SUBSTRATES
TRANSITION ELEMENTS
TUNNELING
URANIUM COMPOUNDS
URANIUM DIOXIDE
URANIUM OXIDES