Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2 times 1)

Journal Article · Mon Oct 14 00:00:00 EDT 1991 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.67.2187· OSTI ID:5189516

Lin, D; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois (USA) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois (USA)

The charge asymmetry between the up and down atoms of an asymmetric dimer on Si(100)-(2{times}1) or Ge(100)-(2{times}1) is tied to the core-level energy splitting. Previous studies of the surface components in the core-level photoemission spectra disagreed on the assignments of the atomic origins, resulting in a disagreement on the charge asymmetry. The present core-level study of the growth of Ge on Si(100) shows clearly that the dimers are essentially covalent.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 5189516
• Journal Information: Physical Review Letters; (United States), Vol. 67:16; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
SURFACE PROPERTIES
ASYMMETRY
CHARGE DISTRIBUTION
DIMERIZATION
EPITAXY
PHOTOEMISSION
SILICON
CHEMICAL REACTIONS
ELEMENTS
EMISSION
METALS
POLYMERIZATION
SECONDARY EMISSION
SEMIMETALS
360603* - Materials- Properties