Diffusive phenomena in Si{sub 3}N{sub 4} ceramics with MgO
Conference
·
OSTI ID:518581
- Toyota Central Research and Development Labs. Inc., Aichi-ken (Japan)
The diffusion coefficient at the grain boundaries of two Si{sub 3}N{sub 4} ceramics containing MgO as a sintering aid was measured by the diffusion couple method. Diffusion coefficients obtained were on the order of 10{sup -9} -10{sup -10} cm{sup 2}/sec below 1600{degrees}C and 10{sup -7} cm{sup 2}/sec above 1650{degrees}C. These values were much larger than those of the Si and N in Si{sub 3}N{sub 4} crystal. The apparent activiation energy of diffusion was about 265KJ/mol below 1600{degrees}C and 407KJ/mol above 1650{degrees}C.
- OSTI ID:
- 518581
- Report Number(s):
- CONF-960367--
- Country of Publication:
- United States
- Language:
- English
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