Reactive ion etching of indium-tin-oxide films

Journal Article · Thu Jun 01 04:00:00 EDT 1989 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2097042· OSTI ID:5179299

Calahorra, Z; Minami, E; White, R M; Muller, R S ^[1]

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1. California Univ., Berkeley, CA (USA). Dept. of Electrical Engineering and Computer Sciences

Oxygen deficient indium-tin-oxide (ITO) films exhibit a high electrical conductivity combined with high transmission in the visible spectral region. This combination of properties has led to its many electo-optic applications, mainly as transparent electrode in various devices. To take full advantage of ITO films in current and future devices, fine-line patterning methods must be developed for this material. The wet etch techniques that are commonly used in etching of ITO are not satisfactory. Reactive ion etching (RIE) combines the advantages of sputter etching, which is highly anisotropic but not selective, with those of plasma etching, which is selective but not anisotropic. The combined process (RIE) is both selective and highly anisotropic. This paper describes a RIE process for ITO using HI gas as an etchant.

• OSTI ID: 5179299
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 136:6; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ETCHING
FILMS
INDIUM COMPOUNDS
INDIUM OXIDES
IONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SURFACE FINISHING
THIN FILMS
TIN COMPOUNDS
TIN OXIDES