Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells

Journal Article · Mon Sep 30 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106226· OSTI ID:5170794

Campbell, I H; Watkins, D E; Smith, D L ^[1]; Subbanna, S; Kroemer, H ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico (USA)
2. ECE, University of California at Santa Barbara, Santa Barbara, California (USA)

We present electrooptic modulation results on (100), (211)A and (211)B oriented InGaAs/GaAs multiple quantum wells. Internal electric fields are generated by a combination of strain, due to lattice mismatch, and the piezoelectric properties of III-V semiconductors in the (211) structures. These fields have opposite orientation in the (211)A and (211)B samples. They do not occur in the (100) samples. The total electric field is a superposition of the strain-generated field, the built-in field from the {ital p}-{ital n} junction and any externally applied field. We show that whereas in the conventional (100) structures the exciton energy is a quadratic function of applied field, the strain-generated fields cause a linear shift in the exciton resonance with applied field in the (211) structures. In addition, the direction of the excitonic shift is opposite in the (211)A and (211)B samples, because the sign of the strain-generated fields are opposite for these samples.

• OSTI ID: 5170794
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:14; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
ELECTRO-OPTICAL EFFECTS
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASL
MODULATION
NATIONAL ORGANIZATIONS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
US AEC
US DOE
US ERDA
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