In sub 0. 53 Ga sub 0. 47 As metal-semiconductor-metal photodetector using proton bombarded p -type material

Journal Article · Tue Oct 01 00:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349205· OSTI ID:5170291

Rao, M V ^[1]; Hong, W; Caneau, C; Chang, G ^[2]; Papanicolaou, N; Dietrich, H B ^[3]

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1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia (USA)
2. Bellcore, Red Bank, New Jersey (USA)
3. Naval Research Laboratory, Washington, DC (USA)

Metal-semiconductor-metal (MSM) photodetectors have been fabricated using as-grown and proton-bombarded {ital p}-type In{sub 0.53}Ga{sub 0.47}As. Proton bombardment caused a decrease in the dark current, an increase in the breakdown voltage, and an improvement in the speed of the MSM detector. The dark current of the MSM detector with 3{times}10{sup 15} cm{sup {minus}3} proton bombardment is 10 nA at 2 V and 300 nA at 5-V bias. The dc responsivity is 0.7 A/W and impulse response full width at half maximum is 160 ps for 1.3 {mu}m radiation at 5 V bias.

• OSTI ID: 5170291
• Journal Information: Journal of Applied Physics; (United States), Vol. 70:7; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
INDIUM ARSENIDES
PHOTODETECTORS
FABRICATION
P-TYPE CONDUCTORS
PERFORMANCE
PHOTOCURRENTS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
360605* - Materials- Radiation Effects