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Title: Method of forming semicrystalline silicon article and product produced thereby

Patent ·
OSTI ID:5166786

A method of forming a semicrystalline silicon solar energy cell having individual grains of silicon at the light-receiving surface of the cell. Impurities in the silicon concentrated in the grain boundaries are removed by etching away at least substantial portions of the boundaries at the wafer surface and between adjoining grains so that, upon subsequent diffusion, a photovoltaic junction will be formed at the light-receiving surface and will extend into the interior of the wafer between adjoining grains.

Assignee:
Solarex Corp
Patent Number(s):
US 4320168
OSTI ID:
5166786
Resource Relation:
Patent File Date: Filed date 11 Dec 1978; Other Information: PAT-APPL-968039
Country of Publication:
United States
Language:
English