Pulsed microwave processing of high- Tc superconducting films
Conference
·
OSTI ID:5161526
- Sandia National Labs., Livermore, CA (United States)
- Lawrence Livermore National Lab., CA (United States)
- Carnegie-Mellon Univ., Pittsburgh, PA (United States). Dept. of Electrical and Computer Engineering
We have used 2.0-{mu}sec microwave pulses at a frequency of 2.856 GHz to rapidly heat thin amorphous yttrium-barium-copper-oxide (YBCO) films deposited onto silicon substrates. The samples were irradiated inside a WR-284 waveguide by single-pass TE{sub 10} pulses in a traveling wave geometry. X-ray diffractometry studies show that an amorphous-to-crystalline phase transition occurs for incident pulse powers exceeding about 6 MW, in which case the amorphous YBCO layer is converted to Y{sub 2}BaCuO{sub 5}. Microscopy of the irradiated film reveals that the phase transition is brought about by melting of the YBCO precursor film and crystallization of the molten layer upon solidification. Time-resolved in situ experiments of the microwave reflectivity (R) and transmissivity (T) show that there is an abrupt change in R for microwave pulse powers exceeding the melt threshold, so that measurements of R and T can be used to monitor the onset of surface melting.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5161526
- Report Number(s):
- SAND-92-1183C; CONF-920402--22; ON: DE92014950
- Country of Publication:
- United States
- Language:
- English
Similar Records
Pulsed microwave processing of high-{Tc} superconducting films
Melting of silicon surfaces by high-power pulsed microwave radiation
Melting of silicon surfaces by high-power pulsed microwave radiation
Conference
·
Wed Jul 01 00:00:00 EDT 1992
·
OSTI ID:10154062
Melting of silicon surfaces by high-power pulsed microwave radiation
Journal Article
·
Thu Sep 15 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:6926488
Melting of silicon surfaces by high-power pulsed microwave radiation
Technical Report
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:5739298
Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360605 -- Materials-- Radiation Effects
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COHERENT SCATTERING
COPPER COMPOUNDS
COPPER OXIDES
DIFFRACTION
ELECTROMAGNETIC RADIATION
FILMS
HEATING
HIGH-TC SUPERCONDUCTORS
MICROWAVE RADIATION
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATION HEATING
RADIATIONS
REFLECTIVITY
SCATTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
360601* -- Other Materials-- Preparation & Manufacture
360605 -- Materials-- Radiation Effects
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COHERENT SCATTERING
COPPER COMPOUNDS
COPPER OXIDES
DIFFRACTION
ELECTROMAGNETIC RADIATION
FILMS
HEATING
HIGH-TC SUPERCONDUCTORS
MICROWAVE RADIATION
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATION HEATING
RADIATIONS
REFLECTIVITY
SCATTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
YTTRIUM COMPOUNDS
YTTRIUM OXIDES