Interfacial segregation in perovskites. Part 3; Microstructure and electrical properties
- Dept. of Materials Engineering, Virginia Polytechnic Inst. and State Univ., Blacksburg, VA (US)
- Dept. of Materials Science and Engineering, and Materials Research Lab., Univ. of Illinois at Urbana-Champaign, Urbana, IL (US)
A model is proposed to relate segregation of dopants with the development of fine ceramic microstructures and electrical properties in polycrystalline donor-doped BaTiO{sub 3}. As the average dopant concentration is increased, the dopant concentration at the grain boundary increases compared with the bulk. This has two important effects: (1) dopant incorporation at the grain boundary shifts from electronic to vacancy compensation and the formation of high-resistive layers, and (2) grain-boundary mobility is impeded and grain growth retarded with increased dopant additions. Thus, for high dopant concentrations, donor-doped BaTiP{sub 3} becomes insulating. The model discusses in detail the nonequilibrium heterogeneous defect chemistry as a function of thermal-processing conditions and accounts for barrier layer phenomena.
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 5156875
- Journal Information:
- Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 73:11; ISSN JACTA; ISSN 0002-7820
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRICAL PROPERTIES
GRAIN BOUNDARIES
MATERIALS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PEROVSKITES
PHYSICAL PROPERTIES
SEGREGATION
STRUCTURAL MODELS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS