Evidence for potential fluctuations in compensated amorphous silicon. [Si:H; Si:B]

Journal Article · Tue Oct 15 00:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.7935· OSTI ID:5153946

Howard, J A; Street, R A ^[1]

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1. Xerox Palo Alto Research Center, Palo Alto, California (USA)

Measurements of the electron and hole drift mobilities and the optical-absorption edge in compensated hydrogenated amorphous silicon are reported. The mobilities of both carriers decrease with increasing doping and converge to similar values for gas-phase doping levels greater than one part per thousand. The mobility and optical-absorption data are not consistent with disorder-induced band-tail broadening, but agree with the predictions of a model of long-range potential fluctuations originating from charged donor and acceptor states.

• OSTI ID: 5153946
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 44:15; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CARRIER MOBILITY
AMORPHOUS STATE
BORON ADDITIONS
DOPED MATERIALS
FLUCTUATIONS
HYDROGENATION
POTENTIALS
RADIATION ABSORPTION ANALYSIS
ALLOYS
BORON ALLOYS
CHEMICAL ANALYSIS
CHEMICAL REACTIONS
ELEMENTS
MATERIALS
MOBILITY
NONDESTRUCTIVE ANALYSIS
SEMIMETALS
VARIATIONS
360603* - Materials- Properties