Unoccupied surface electronic structure of Gd(0001)

Journal Article · Tue Mar 15 00:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.49.7734· OSTI ID:5153355

Li, D ^[1]; Dowben, P A ^[2]; Ortega, J E ^[3]; Himpsel, F J ^[4]

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1. Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States) Materials Science Divison, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States) Department of Physics, University of Nebraska, Lincoln, Nebraska 68588 (United States)
3. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States) Departamento de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
4. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near [ital E][sub [ital F]] is observed at [bar [Gamma]]. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be [Gamma][sub 3][sup +] at 1.9 eV and [ital A][sub 1] at 0.8 eV.

• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 5153355
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 49:11; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GADOLINIUM
ELECTRONIC STRUCTURE
HYDROGEN
ADSORPTION
ENERGY-LEVEL TRANSITIONS
FERMI LEVEL
PHOTOEMISSION
THIN FILMS
ELEMENTS
EMISSION
ENERGY LEVELS
FILMS
METALS
NONMETALS
RARE EARTHS
SECONDARY EMISSION
SORPTION
360102* - Metals & Alloys- Structure & Phase Studies