Unoccupied surface electronic structure of Gd(0001)
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States) Materials Science Divison, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States) Department of Physics, University of Nebraska, Lincoln, Nebraska 68588 (United States)
- IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States) Departamento de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
- IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near [ital E][sub [ital F]] is observed at [bar [Gamma]]. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be [Gamma][sub 3][sup +] at 1.9 eV and [ital A][sub 1] at 0.8 eV.
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 5153355
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:11; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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