Tunneling characteristics of silicon covered molybdenum tip apex

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585512· OSTI ID:5152066

Nishikawa, Osamu; Haruhiko, Koyama; Tomitori, Masahiko; Iwawaki, Fumikazu ^[1]

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1. Tokyo Inst. of Tech., Yokahama (Japan)

This paper reports on the variation of field emission characteristics of Mo tip apexes by the adsorbed Si atoms investigated with an instrument combined of an atom probe and a field emission electron spectrometer. The Si/Mo surfaces were also examined using the scanning tunneling microscope/spectrometer. The deposited silicon was found to form microclusters on the Mo substrate and exhibit the semiconductive electronic states which are retained even at the Si-Mo interface where Si and Mo atoms coexist. Heating the Si/Mo surfaces results in the formation of silicides with metallic states. While the work functions of the Si clusters are about 10% larger than the Mo substrate, the silicide work functions are nearly 10% smaller than that of Mo.

• OSTI ID: 5152066
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

440800* -- Miscellaneous Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ACCURACY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
FIELD EMISSION
METALS
MICROSCOPY
MOLYBDENUM
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SPECTROSCOPY
TRANSITION ELEMENTS
TUNNELING