Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions

Journal Article · Mon Mar 21 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111872· OSTI ID:5149974

Gruen, D M; Liu, S; Krauss, A R; Luo, J; Pan, X ^[1]

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1. Materials Science, Chemistry, and Chemical Technology Divisions, Argonne National Laboratory, Argonne, Illinois 60439-4831 (United States)

Diamond films are predominantly grown using approximately 1% of a hydrocarbon precursor in hydrogen gas. Hydrogen is generally believed to be necessary for the diamond thin-film growth process. However, hydrogen in varying amounts is inevitably incorporated in the growing diamond lattice, leading to structural defects. We report here the successful growth of diamond films using fullerene precursors in an argon microwave plasma, a unique development achieved without the addition of hydrogen or oxygen. We speculate that collisional fragmentation of C[sub 60] to give C[sub 2] could be responsible for the high growth rate of the very-fine-grained diamond films.

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 5149974
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:12; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CARBON
DIAMONDS
ELEMENTAL MINERALS
ELEMENTS
FILMS
FULLERENES
GRAIN SIZE
HEATING
MICROSTRUCTURE
MICROWAVE HEATING
MINERALS
NONMETALS
SIZE
THIN FILMS