Simulation of dislocation source dynamics in silicon for a 60{degree} dislocation

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Acta Materialia

DOI:https://doi.org/10.1016/S1359-6454(96)00310-2· OSTI ID:514673

Geipel, T ^[1]

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1. Univ. Bonn (Germany). Inst. fuer Anorganische Chemie

A new approach for the simulation of a Frank-Read source in directionally bonded, e.g., covalent, cubic materials based on an f.c.c. lattice is presented. In this algorithm, a segment of a perfect dislocation, initially lying along a <1{bar 1}0> Peierls valley, is pinned at its two ends on a {l_brace}111{r_brace} glide plane. Under the application of a shear stress, this dislocation first develops into a semi-hexagonal half-loop and then swings around the pinning centers to form a full dislocation loop surrounding a reformed dislocation source. In the present study the temperature has explicitly been included through the thermal activation of kink pairs and their influence on dislocation velocity. One of the conclusions drawn from this work is that the critical stress for a 60{degree} source dislocation in silicon appears to be highly temperature sensitive.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-93ER45496
• OSTI ID: 514673
• Journal Information: Acta Materialia, Journal Name: Acta Materialia Journal Issue: 6 Vol. 45; ISSN 1359-6454; ISSN ACMAFD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL-PHASE TRANSFORMATIONS
DISLOCATIONS
FCC LATTICES
MATHEMATICAL MODELS
SILICON
TEMPERATURE DEPENDENCE