Effects of 450/sup 0/C thermal annealing upon oxygen precipitation in B-doped CZ Si wafers
Conference
·
OSTI ID:5143892
This study investigated effects of 450/sup 0/C pre-anneal upon oxygen precipitation during subsequent low (700/sup 0/C)-medium (950/sup 0/C) temperature two-step furnace anneals. Measurements were made on lightly B-doped CZ Si with low and high carbon concentrations, and on low carbon content medium and heavily B-doped CZ Si. Our oxygen precipitation rate and oxide precipitate morphology data show that both carbon and boron significantly affect oxygen precipitation rates and plate-like and polyhedral oxide precipitates coexist in wafers with low boron and carbon levels.
- Research Organization:
- Siltec Corp., Mountain View, CA (USA); Nanosil, Sunnyvale, CA (USA); Sandia National Labs., Albuquerque, NM (USA); Signetics Corp., Sunnyvale, CA (USA); Stanford Univ., CA (USA). Stanford Synchrotron Radiation Lab.; Carnegie-Mellon Univ., Pittsburgh, PA (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5143892
- Report Number(s):
- SAND-86-0849C; CONF-860895-4; ON: DE87000961
- Country of Publication:
- United States
- Language:
- English
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