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Transient and persistent hole burning of the reaction center of photosystem II

Journal Article · · Journal of Physical Chemistry; (USA)
DOI:https://doi.org/10.1021/j100341a090· OSTI ID:5143285
; ;  [1];  [2]
  1. Iowa State Univ., Ames (USA)
  2. Solar Energy Research Institute, Golden (USA)
Transient hole burned spectra for the primary donor state, P680*, of the photosystem II (PSII) reaction center (RC) are reported. The RC complex was prepared by a modification of the Nanba and Satoh procedure. The P680* hole profile at 4.2 K consists of a weak but relatively sharp zero-phonon hole (width 5-6 cm{sup {minus}1}) superimposed on a broad hole (width {approx} 130 cm{sup {minus}1}). This structure is successfully analyzed with the theory of Hayes and co-workers for hole burning in the presence of arbitrarily strong linear electron-phonon coupling. The zero-phonon hole width yields a decay time for P680* of 1.9 {plus minus} 0.2 ps at 4.2 K. Persistent spectral hole burning is also reported for the accessory pigments of PSII RC that absorb in the near vicinity of P680. In contrast with the hole spectra of P680*, which are characterized by strong linear electron-photon coupling, the persistent hole spectra are characterized by weak coupling (strong zero-phonon hole and weak phonon sideband hole).
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
5143285
Journal Information:
Journal of Physical Chemistry; (USA), Journal Name: Journal of Physical Chemistry; (USA) Vol. 93:4; ISSN JPCHA; ISSN 0022-3654
Country of Publication:
United States
Language:
English