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U.S. Department of Energy
Office of Scientific and Technical Information

Low cost thin film polycrystalline silicon solar cells. Final report, March 15, 1979-July 31, 1980

Technical Report ·
OSTI ID:5141518
The objective of this contract is to advance the thin film silicon solar cell technology with a view toward achieving photovoltaic conversion efficiencies greater than 10% at a cost of $100 to $300/kWe. The technical approaches consist of (1) the purification of metallurgical silicon by acid extraction and gettering techniques, (2) the preparation of metallurgical silicon substrates by the unidirectional solidification of the melt on graphite, (3) the deposition of a silicon p-n junction structure on metallurgical silicon substrates by the trichlorosilane process, and (4) the application of grid contacts and anti-reflection coatings. Major efforts were directed to the scale-up and optimization of all processing steps. The purification of metallurgical silicon by acid-extraction and phosphorus ntoxide treatment has been studied in detail. The minimum iron concentration obtainable is about 500 ppMa by the acid-extraction technique and is about 200 ppMa by the gettering technique. A standard procedure has been developed for the acid-extraction of metallurgical silicon, however, considerable difficulties have been encountered in the large-scale gettering process. Metallurgical silicon substrates have been prepared from the unidirectional solidification of the melt on graphite by the stationary and moving coil techniques. Many large area solar cells have been prepared from acid-extracted metallurgical silicon substrates by depositing the active region using the trichlorosilane process. The best cells (32 cm/sup 2/) have AM1 efficiencies of about 7.7%, and their photovoltaic properties have been characterized.
Research Organization:
Poly Solar, Inc., Garland, TX (USA)
DOE Contract Number:
AC03-79ET23048
OSTI ID:
5141518
Report Number(s):
DOE/ET/23048-T1
Country of Publication:
United States
Language:
English