Method of making passivated antireflective coating for photovoltaic cell

Patent · Tue Apr 30 00:00:00 EDT 1991

OSTI ID:5139592

Lamb, W R; Griffin, D

This patent describes a method of fabricating a point contact photovoltaic cell. It comprises: providing a semiconductor substrate, oxidizing the surfaces of the semiconductor substrate, forming doped regions of p-conductivity type and n-conductivity type in a first major surface of the substrate; forming first and second metallization layers for interconnecting the plurality of doped regions, depositing silicon nitride on the first and second metallization layers as an etchant protection layer, thinning the substrate by etching a second major surface opposite from the first major surface, and forming a layer of antireflective material on the second major surface.

• Assignee: Electric Power Research Inst., Palo Alto, CA (USA)
• Patent Number(s): US 5011782; A
• Application Number: PPN: US 7-322387
• OSTI ID: 5139592
• Resource Relation: Patent File Date: 31 Mar 1989
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
PHOTOVOLTAIC CELLS
ANTIREFLECTION COATINGS
SILICON NITRIDES
SURFACE COATING
DOPED MATERIALS
FABRICATION
MATERIALS TESTING
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
COATINGS
DEPOSITION
DIRECT ENERGY CONVERTERS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PNICTIDES
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion