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Title: Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.349794· OSTI ID:5139127
; ;  [1]; ;  [2]
  1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152 (Japan)
  2. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152 (Japan)

The highly conductive and textured ZnO films have been grown by metalorganic chemical vapor deposition using diethylzinc and H{sub 2}O as reactant gases. The B{sub 2}H{sub 6} gas has also been successfully used as an {ital n}-type dopant gas to obtain highly conductive ZnO with a sheet resistivity for 2-{mu}m-thick film as low as 10 {Omega}/(spec. char. missing) at the very low temperature of 150 {degree}C. It was found that the crystal orientation and grain structure change with B{sub 2}H{sub 6} flow rate. The decreasing of the film transmittance due to the free-carrier absorption in the wavelength region above 1000 nm was observed and it seems that the impurity scattering was the dominant interaction during this process. The shift of the absorption edge due to band filling was also observed as the B{sub 2}H{sub 6} flow rate was increased.

OSTI ID:
5139127
Journal Information:
Journal of Applied Physics; (United States), Vol. 70:11; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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