Kinetics and mechanisms of high-temperature creep in silicon carbide: I, reaction-bonded

Journal Article · Fri Jun 01 00:00:00 EDT 1984 · J. Am. Ceram. Soc.; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1984.tb19726.x· OSTI ID:5136665

Carter, C H; Bentley, J; Davis, R F

The kinetic characteristics and the controlling mechanism of steady-state creep were determined for NC-430 reaction-bonded silicon carbide which was subjected to high temperatures (1848 to 1923 K) and constant compressive stresses (110 to 220 MN/m/sup 2/). Both as-received and as-crept materials were studied extensively by transmission electron microscopy as one means of determining the controlling creep mechanism. Small variations in sample density resulted in large variations in the creep rate.

• Research Organization: Department of Materials Engineering, North Carolina State University, Raleigh, North Carolina
• OSTI ID: 5136665
• Journal Information: J. Am. Ceram. Soc.; (United States), Vol. 67:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CREEP
DENSITY
HEAT TREATMENTS
STEADY-STATE CONDITIONS
STRESS ANALYSIS
TEMPERATURE EFFECTS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
CARBIDES
CARBON COMPOUNDS
ELECTRON MICROSCOPY
MECHANICAL PROPERTIES
MICROSCOPY
PHYSICAL PROPERTIES
SILICON COMPOUNDS
360203* - Ceramics
Cermets
& Refractories- Mechanical Properties