Imaging of near-neighbor atoms in semiconductors by photoelectron holography

Journal Article · Mon Feb 03 04:00:00 EST 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.68.650· OSTI ID:5132429

Herman, G S; Thevuthasan, S; Tran, T T; Kim, Y J; Fadley, C S ^[1]

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1. Department of Chemistry, University of Hawaii, Honolulu, Hawaii 96822 (United States)

We have measured and calculated the full intensity profiles for Si 2{ital p} photoelectron emission from Si(111), and have analyzed these via a two-dimensional Fourier-transform holographic inversion procedure. The resulting images associated with two symmetry-inequivalent emitter types exhibit elongated features corresponding to near-neighbor atoms in the first (111) double layer above a given emitter, and are found to improve in quality if strong forward-scattering peaks are removed in a smooth way.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5132429
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:5; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ELEMENTS
EMISSION
FOURIER TRANSFORMATION
HOLOGRAPHY
IMAGE PROCESSING
INTEGRAL TRANSFORMATIONS
PHOTOEMISSION
PROCESSING
SECONDARY EMISSION
SEMIMETALS
SILICON
TRANSFORMATIONS