Epitaxial (111) Pd films formed on (111) Cu
Epitaxial Pd films ranging in thickness from 1 A up to 45 A were formed by thermal evaporation on (111) Cu substrate films at 25/sup 0/C under UHV conditions. The growth of these Pd films was investigated by in situ RHEED techniques. Subsequent examinations of the Pd/Cu bilayers by TEM, TED, and RHEED were used to characterize the microstructures and strain associated with growth. TEM shows misfit dislocations everywhere across the interface at a Pd overlayer thickness of 5 A or more, indicating complete surface coverage after about two average monolayers have been deposited. Strain and dislocation spacing measurements suggest the presence of two separate misfit dislocation networks at the interface. RHEED and TED measurements show a reduction in strain in the Pd overgrowth with increasing thickness at a rate somewhat less than predicted by van der Merwe.
- Research Organization:
- Syracuse Univ., NY (USA). Dept. of Chemical Engineering and Materials Science
- DOE Contract Number:
- AS02-77ER04496
- OSTI ID:
- 5132301
- Report Number(s):
- CONF-800928-4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101 -- Metals & Alloys-- Preparation & Fabrication
360102* -- Metals & Alloys-- Structure & Phase Studies
COATINGS
COPPER
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELEMENTS
EPITAXY
FABRICATION
FILMS
INTERFACES
LINE DEFECTS
METALS
MICROSTRUCTURE
PALLADIUM
PLATINUM METALS
STRAINS
TRANSITION ELEMENTS
VAPOR DEPOSITED COATINGS