Superfluid-insulator transition in disordered boson systems

Journal Article · Mon Oct 21 00:00:00 EDT 1991 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.67.2307· OSTI ID:5131537

Krauth, W; Trivedi, N; Ceperley, D ^[1]

---

1. National Center for Supercomputing Applications, University of Illinois at Urbana-Champaign, Urbana, Illinois (USA) Department of Physics, State University of New York, Stony Brook, New York (USA) Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois (USA)

We present results of path-integral Monte Carlo simulations of bosons on a two-dimensional square lattice in a random potential of average strength {ital V} and with on-site repulsion {ital U}. We find that the superfluid density {rho}{sub {ital s}} is enhanced by increasing {ital V} and {ital U} in certain regions of parameter space. By combining the results of {rho}{sub {ital s}}, with the behavior of the density-density correlation function on lattices of size up to 10{times}10, we study the superfluid--to--Mott-insulator transition and the transition from a superfluid to a disorder-localized ( Bose glass'') phase.

• OSTI ID: 5131537
• Journal Information: Physical Review Letters; (United States), Vol. 67:17; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOSONS
PHASE STUDIES
COMPUTERIZED SIMULATION
GLASS
HAMILTONIANS
MONTE CARLO METHOD
PHASE TRANSFORMATIONS
SUPERFLUIDITY
TWO-DIMENSIONAL CALCULATIONS
MATHEMATICAL OPERATORS
QUANTUM OPERATORS
SIMULATION
640450* - Fluid Physics- Superfluidity