High efficiency detection of tritium using silicon avalanche photodiodes
- RMD, Inc., Watertown, MA (United States)
This paper describes our recent work in developing low noise silicon avalanche photodiodes (APD) for detection of tritium ({sup 3}H) P-particles with high efficiency. In view of the very low energy of {sup 3}H {beta}-particles (E{sub max}=18 keV), research was carried out to produce APD structures with a very thin entrance window. This involved using low energy boron implantation into the APD front surface, followed by pulsed excimer laser annealing of the implanted face to form a p{sup +} contact. The resulting devices had surface dead layer of about 0.07 to 0.1 {mu}m and operated with low noise threshold (250-300 eV) for 2x2 mm{sup 2} size. The {sup 3}H {beta}-particle detection efficiency was measured to be approximately 50%. This is about the twice the detection efficiency achieved with standard APDs.
- OSTI ID:
- 513106
- Report Number(s):
- CONF-961123-; CNN: Grant 2R44MH53694-02; TRN: 97:014159
- Resource Relation:
- Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Anaheim, CA (United States), 2-9 Nov 1996; Other Information: PBD: 1996; Related Information: Is Part Of 1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3; Del Guerra, A. [ed.]; PB: 2138 p.
- Country of Publication:
- United States
- Language:
- English
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