In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry

Journal Article · Mon Nov 11 00:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105947· OSTI ID:5123320

An, I; Li, Y M; Wronski, C R; Nguyen, H V; Collins, R W ^[1]

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1. Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania (USA)

We have developed techniques to determine the near-infrared to near-ultraviolet dielectric function and optical gap of ultrathin amorphous silicon ({ital a}-Si:(H)) using real-time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to {similar to}50 A {ital a}-Si:H films prepared by plasma-enhanced chemical vapor deposition, and to {similar to}250 A pure {ital a}-Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.

• OSTI ID: 5123320
• Journal Information: Applied Physics Letters; (United States), Vol. 59:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
ELLIPSOMETRY
REAL TIME SYSTEMS
SILICON
DIELECTRIC PROPERTIES
AMORPHOUS STATE
ENERGY GAP
HYDROGEN ADDITIONS
OPTICAL PROPERTIES
THIN FILMS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MEASURING METHODS
PHYSICAL PROPERTIES
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies
440600 - Optical Instrumentation- (1990-)