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Excitons in semiconducting superlattices, quantum wells, and ternary alloys

Technical Report ·
OSTI ID:5122047
 [1]; ;  [2]
  1. Dartmouth Coll., Hanover, NH (United States)
  2. Bellcore, Red Bank, NJ (United States)
It is now possible to fabricate semiconducting layered structures with precisely defined layer thicknesses down to one monolayer (two atomic diameters). An example is the superlattice'' (SL) structure, in which two semiconductors with different band gaps are interleaved. The electronic properties of the SL are quite different from those of the constitutents and offer interesting new possibilities both in device design and in basic physics. This proposal aims to improve our understanding of optically excited states ( excitons'' and electron-hole plasmas'') in a particular class of these structures: the so-called Type 2 indirect'' SL's in which the electron and hole created by optical excitation are separated both in real and in momoentum space. Time-resolved tunable laser spectroscopy, with and without external perturbations such as magnetic field, electric field, and uniaxial stress, are used principally to study the following phenomena. 1. Exciton states in SLs with only a few atomic layers per period, for which the familiar effective mass model'' of semiconductor states breaks down. 2. The electron-hole plasma which forms when the excitation density is high. This plasma may be in a liquid state at low temperatures. In the short period superlattices are our primary concern, electrons and holes are spatially separated, leading to internal electric fields which might be expected to have a pronounced effect on the plasma properties.
Research Organization:
Dartmouth Coll., Hanover, NH (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
FG02-87ER45330
OSTI ID:
5122047
Report Number(s):
DOE/ER/45330-4; ON: DE91018805
Country of Publication:
United States
Language:
English