Mott-Schottky analysis of nanometer-scale thin-film anatase TiO{sub 2}

Journal Article · Thu May 01 04:00:00 EDT 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837668· OSTI ID:511951

Krol, R van de; Goossens, A; Schoonman, J ^[1]

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1. Delft Univ. of Technology (Netherlands). Lab. for Applied Inorganic Chemistry

Recently, much attention has been focused on the use of nanostructured metal oxide semiconductors for various applications, such as electrochromic windows, photocatalytic devices, lithium-ion batteries, dielectrics in integrated circuits, and dye-sensitized TiO{sub 2} solar cells. Smooth nanometer-scale films of anatase TiO{sub 2} on indium-tin oxide substrates (ITO) are obtained by electron-beam evaporation of reduced TiO{sub 2} powder. Mott-Schottky analysis shows an abrupt change in slope when the depletion layer reaches the TiO{sub 2}/ITO interface. An electrostatic model is derived, which gives a quantitative description of the observed change in slope. From the potential at which the slope changes, the dielectric constant of anatase could be accurately determined. A value of 55 is found, which is significantly lower than those reported for anatase TiO{sub 2}.

• Sponsoring Organization: USDOE
• OSTI ID: 511951
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 144; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

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36 MATERIALS SCIENCE
42 ENGINEERING
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DIELECTRIC PROPERTIES
ELECTRIC BATTERIES
ENERGY BEAM DEPOSITION
MATHEMATICAL MODELS
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