Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Nonequilibrium behavior of the dynamic resistive transition in superconducting thin films

Thesis/Dissertation ·
OSTI ID:5113177
A detailed investigation of the dynamic resistive transition in superconducting thin films was performed. The superconductors were excited into the nonequilibrium resistive state by picosecond optical excitation, producing a deep excitation of the superconductor, or by picosecond risetime current pulse injection producing a shallow excitation of the superconductor. Under optical excitation, the superconducting lead and tin films underwent a first-order transition into the intermediate state when the critical optical power was exceeded. In the intermediate state, superconducting and normal regions coexist producing a resistance less than the normal state value. Only at much larger power did the superconductor enter the normal state. The range of optical power producing the intermediate state was proportional to the strength of the electron-phonon interaction. Under current injection, the superconducting-normal transition (SN) of tin films was found to be dominated by a delay time. As a consequence, it was possible to exceed the dc critical current of the superconductor for a short period of time. The behavior was investigated by a transmission experiment that increased the effective bandwidth of the apparatus into the subnanosecond regime. The behavior of the SN transition was adequately predicted by TDGL theory.
Research Organization:
Rochester Univ., NY (USA)
OSTI ID:
5113177
Country of Publication:
United States
Language:
English