Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980
The survey of Si precursors leading to electrodeposition of Si in organic solvents was extended this quarter to cover SiCl/sub 4/, (ClC/sub 3/H/sub 6/)SiCl/sub 3/, and Si(OEt)/sub 4/. Plating experiments with SiHCL/sub 3/ solutions in propylene carbonate with 0.1M tetrabutylammonium tetrafluoroborate were continued. Silicon was deposited on ITO glass (Nesatron) as well as Mo substrates at temperatures from 25-80/sup 0/C. Both potentiostatic and galvanostatic conditions were used. The high resistance of the films (10/sup 6/-10/sup 8/ ..cap omega..-cm) limited the thickness which could be deposited by either method to less than 5 ..mu..m. X-ray analysis of the films confirmed that they were amorphous. SEM analysis of the films revealed a very porous structure with nodules about 1 ..mu..m in diameter. Annealing the deposit at 400/sup 0/C in an Ar:H/sub 2/ atmosphere resulted in a slightly smoother surface but the nodules remained. The films deposited on ITO glass had a band gap of about 1.0 eV and an EO/sub 4/ value of 1.5-2.0 eV. The Auger analysis of the films showed the presence of large amounts of oxygen in the samples that had been exposed to air. The first silicon deposits were obtained from the high temperature fluoride molten salts. Plating on a platinum cathode resulted in silicide formation which suggests a method of making a PtSi alloy for use as a stable reference electrode in the fluoride melts containing silicon (IV). Galvanostatic deposition on silver substrates in general gave thick, uneven, and poorly adherent deposits.
- Research Organization:
- EIC Corp., Newton, MA (USA)
- DOE Contract Number:
- AC03-79ET23046
- OSTI ID:
- 5112422
- Report Number(s):
- DOE/ET/23046-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979
Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 01, June 11, 1979-September 10, 1979
Related Subjects
36 MATERIALS SCIENCE
SILICON
ELECTRODEPOSITION
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
CHEMICAL REACTIONS
ELECTROCHEMISTRY
ELECTRODEPOSITED COATINGS
ELECTROPLATING
IMPURITIES
MICROSTRUCTURE
MOLTEN SALTS
ORGANIC SOLVENTS
POLYCRYSTALS
PRECURSOR
QUANTITATIVE CHEMICAL ANALYSIS
RESEARCH PROGRAMS
SILANES
SILICON CHLORIDES
SILICON SOLAR CELLS
CHEMICAL ANALYSIS
CHEMISTRY
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTROLYSIS
ELECTRON SPECTROSCOPY
ELEMENTS
EQUIPMENT
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
LYSIS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATING
SALTS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SOLVENTS
SPECTROSCOPY
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture