Magnetic-field-dependent zero-bias anomaly in Al-oxide-Ga (granular) thin-film tunnel junctions
High-T/sub c/ gallium films were prepared by evaporating gallium in partial pressure of oxygen and electron tunneling characteristics of tunnel junctions of the form Al-oxide-Ga were studied with gallium film being in the superconducting and in the normal states. In the superconducting state a sharp, single gap was observed, and from these characteristics it was ascertained that the mechanism of current flow was indeed through electron tunneling. In the normal state a magnetic-field-dependent zero-bias anomaly corresponding to a resistance maximum at zero bias was observed. The conductance varied as V/sup 1/2/ for all the magnetic field values. The bias dependence is in agreement with recent theories on metal-insulator transition in amorphous materials; however, the magnetic field dependence is a novel feature.
- Research Organization:
- Physics Department, Punjabi University, Patiala, India
- OSTI ID:
- 5112377
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Vol. 25:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ALUMINIUM
TUNNEL EFFECT
ALUMINIUM OXIDES
GALLIUM
ELECTRICAL INSULATORS
ELECTRON CORRELATION
FILMS
MAGNETIC FIELDS
METALS
PHASE TRANSFORMATIONS
SUPERCONDUCTING JUNCTIONS
ULTRALOW TEMPERATURE
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CORRELATIONS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
JUNCTIONS
OXIDES
OXYGEN COMPOUNDS
420201* - Engineering- Cryogenic Equipment & Devices