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Photoelectrochemical performance of ZnSe/CdSe thin film electrodes in aqueous polysulfide electrolyte

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2123896· OSTI ID:5110385
ZnSe/CdSe heterostructure thin film electrodes were produced by ternary elemental vacuum evaporation. These electrodes behaved similarly to MIS type devices when tested photoelectrochemically. Auger depth profiling indicated the formation of an electrochemically generated ZnS interface layer that provided an enhanced V/sub oc/ compared to CdSe alone. Efficiencies as high as 5.4% under simulated AM2 conditions were recorded for these electrodes. This work is pertinent to solar cells. 19 refs.
Research Organization:
Grumman Aerosp Corp, Bethpage, NY
OSTI ID:
5110385
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 129:3; ISSN JESOA
Country of Publication:
United States
Language:
English