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Density dependence of dielectronic recombination in selenium

Journal Article · · Phys. Rev. A; (United States)
Dielectronic recombination has been found to be the dominant recombination process in the determination of the ionization balance of selenium near the Ne-like sequence under conditions relevant to the exploding-foil EUV laser plasmas. The dielectronic recombination process tends to populate excited levels, and these levels in turn are more susceptible to subsequent excitation and ionization than are the ground-state ions. If one defines an effective recombination rate which includes, in addition to the primary recombination, the subsequent excitation and ionization of the additional excited-state population due to the primary recombination, then this effective recombination rate can be density-sensitive at relatively low electron density. We present results for this effective dielectronic recombination rate at an electron density of 3 x 10/sup 20/ electrons/cm/sup 3/ for recombination from Ne-like to Na-like selenium and from F-like to Ne-like selenium. In the former case, the effective recombination rate coefficient is found to be 1.8 x 10/sup -11/ cm/sup 3//sec at 1.0 keV, which is to be compared with the zero-density value of 2.8 x 10/sup -11/ cm/sup 3//sec. In the latter case (F-like to Ne-like), the effective recombination rate coefficient is found to be 1.3 x 10/sup -11/ cm/sup 3//sec, which is substantially reduced from the zero-density result of 3.3 x 10/sup -11/ cm/sup 3//sec. We have examined the effects of dielectronic recombination on the laser gain of the dominant Ne-like 3p-3s transitions and have compared our results with those presented by Whitten et al. (Phys. Rev. A 33, 2171 (1986)).
Research Organization:
Physics Department, Lawrence Livermore National Laboratory, Livermore, California 94550
OSTI ID:
5109015
Journal Information:
Phys. Rev. A; (United States), Journal Name: Phys. Rev. A; (United States) Vol. 34:3; ISSN PLRAA
Country of Publication:
United States
Language:
English