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Title: Continuous Czochralski growth. Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array Project. First quarterly progress report, October--December 1977

Technical Report ·
DOI:https://doi.org/10.2172/5100729· OSTI ID:5100729

The development of equipment and processes to produce single crystal solar silicon by a continuous Czochralski method was studied. ''Continuous'' is defined as the ability to produce 100 kilograms of crystal from only one melt container. The equipment to be used is a Hamco CG2000 Production Crystal Grower. Certain modifications will be made to the grower to enable periodic replenishment of silicon into the crucible and removal of grown crystals. The crystal grower was constructed and installed in a separate room designated and prepared for the project. It was adapted with a modified throat, a vacuum-tight isolation valve, an enlarged pull chamber to hold a supply of poly material, and a modified automatic diameter control (ADC) optical system. It was fully tested and made ready for trial runs. Designs are under way for other modifications to the equipment, including a recharge system, a polysilicon attachment device, and a modified bead-chain pull mechanism capable of pulling and simultaneously weighing a 30 to 40 Kg growing crystal. An economic model was developed for batch CZ as a base-line reference, and for two methods of continuous CZ. Preliminary analysis indicates a cost (value added by crystal growth) of approximately $13 to $17 per kilogram of usable crystal for continuous CZ versus $33.00 for state of art methods. This model will be updated as additional data, process parameters and equipment requirements are obtained.

Research Organization:
Kayex Corp., Rochester, N.Y. (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
NAS-7-100-954888
OSTI ID:
5100729
Report Number(s):
DOE/JPL/954888-1
Country of Publication:
United States
Language:
English