Ge-Sn barrier Josephson tunnel junctions

Journal Article · Mon May 01 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90112· OSTI ID:5093669

Hu, E L; Jackel, L D; Strnad, A R; Epworth, R W; Lucey, R F; Zogg, C A; Gornik, E

A new form of superconducting Josephson tunnel junction has been developed in which superconducting electrons tunnel through thick (approx.600 A) barriers formed by evaporated Ge-Sn mixtures. By varying barrier composition and thickness a wide range of junction I-V characteristics can be obtained. For thick barriers, or barriers with low Sn content, high tunneling resistances and no supercurrent result. Barriers of intermediate thickness or with moderate Sn content yield junctions with electrical properties very similar to conventional hysteretic oxide-barrier junctions. Thin, or high Sn content barriers, give junctions with nonhysteretic I-V characteristics similar to those expected for an ideal superconducting microbridge. The nonhysteretic junctions could be used in nonlatching Josephson logic circuits. In addition, the nonhysteretic junctions show excellent microwave response, and may be useful for millimeter-wave mixing and detection.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5093669
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FABRICATION
FILMS
GERMANIUM ALLOYS
HYSTERESIS
JOSEPHSON JUNCTIONS
LOGIC CIRCUITS
MAGNETOMETERS
MEASURING INSTRUMENTS
PERFORMANCE
PHYSICAL PROPERTIES
SUPERCONDUCTING JUNCTIONS
TIN ALLOYS
TUNNEL EFFECT