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Scintillation properties of Ce sup 3+ doped BaF sub 2 crystals

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.289293· OSTI ID:5090416
; ; ;  [1];  [2]
  1. Radiation Technology Group, Dept. of Applied Physics, Delft Univ. of Technology, Mekelweg 15, 2629 JB Delft (NL)
  2. Radiation Detectors and Crystals, Quartz and Silice Holland B.V., P.O. Box 168, 3454 Z De Meern (NL)
This paper reports on the scintillation properties of cylindrically shaped, {O}1 in. {times} 1 in., and 30 {times} 30 {times} 4.5 mm BaF{sub 2} crystals doped with 0.2, 0.3, 0.5, 0.8, and 1.0 mol% Ce{sup 3+} studied by means of X-ray and gamma ray excitation. Optical transmission, X-ray induced emission, and decay time spectra will be presented. The photoelectron (phe) yield/MeV was measured with an XP2020Q photomultiplier tube. The {O}1 in. {times} 1 in., 0.2 mol% doped crystal has a light yield of 1790 phe/MeV which is larger than the total light yield (1570 phe/MeV) of a pure BaF{sub 2} crystal of the same dimensions. The crystal shows two main scintillation decay times of 47 {plus minus} 5 ns and 260 {plus minus} 40 ns. For the 1.0 mol% doped crystal a light yield of 1210 {plus minus} 80 phe/MeV and a dominating decay time of 81 {plus minus} 7 ns were observed. The crystals scintillate at wavelengths larger than 300 nm and the scintillation light can be detected with glass windowed photomultiplier tubes.
OSTI ID:
5090416
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:2; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English