Theoretical evidence for efficient p-type doping of GaN using beryllium
- INFM-Dipartimento di Scienze Fisiche, Universita di Cagliari, via Ospedale 72, I-09124 Cagliari (Italy)
- TECHSO S.p.A., Zona Industriale Est, I-09122 Cagliari (Italy)
{ital Ab initio} calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be{sub 3}N{sub 2}. It is shown, however, that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in metal-organic-chemical-vapor deposition growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at molecular beam epitaxy growth temperatures. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 508924
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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