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Electronic structures of narrow-band materials

Thesis/Dissertation ·
OSTI ID:5060800
This thesis investigates the electronic structures of narrow-band actinide, rare earth, and transition metal materials, using the experimental techniques of photoemission (PES) and inverse photoemission (BIS) spectroscopy. Narrow-band materials exhibit many interesting phenomena such as mixed-valence, heavy-fermion properties, and high temperature superconductivity. This is primarily due to the correlated narrow band electrons and their interaction with conduction or valence band electrons. The theoretical characterization of the electronic structures of a many body system is the spectral weight of the single particle Green's function. The spectral weight of narrow band electrons is determined by measuring the PES/BIS spectrum, the spectrum to remove and add electrons. For Ce compounds, the impurity Anderson Hamiltonian can describe both the ground state properties and the 4f spectrum. In this description, the low-energy properties are determined by a low-energy scale set by the Kondo temperature, which characterizes spin fluctuations. To make a detailed test of this picture, the Ce 3d and 4f spectra are measured and analyzed using this model for Ce(Ru{sub 1{minus}x}Rh{sub x}){sub 3}B{sub 2} and CeCu{sub 2}Si{sub 2}. The spectral change during the {alpha}-{gamma} phase transition of Ce{sub 0.7}Th{sub 0.3} has been analyzed. The Yb 4f spectrum of YbAl{sub 3} is measured and analyzed by applying the impurity Anderson Hamiltonian calculations for Ce to Yb with an electron-hole mapping. The author has studied the 4f spectra of heavy-fermion compounds, YbXCu{sub 4}, with X = Ag, Au, and Pd. The 5f spectra of uranium materials do not resemble the Ce 4f spectra, in having much more f-weight around E{sub F}. However, the measured 5f width of the heavy fermion uranium materials exceeds the 5f width obtained from the local density functional calculations.
Research Organization:
California Univ., San Diego, CA (United States)
OSTI ID:
5060800
Country of Publication:
United States
Language:
English

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