Mesa-stripe Pb /SUB 1-X/ Sn /SUB X/ Se tunable diode lasers

Journal Article · Sat Oct 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071752· OSTI ID:5051224

Butler, J F; Linden, K J; Reeder, R E

A mesa-stripe configuration for diffused junction Pb /SUB 1-X/ Sn /SUB X-/ Se lasers has been developed. The new lasers exhibit substantially improved performance over nonstripe devices, including CW operating temperatures up to 118 K, overall tuning ranges as wide as 444 cm/sup -1/, and single-mode tuning ranges typically 1-3 cm/sup -1/ for current tuning and as wide as 5.5 cm/sup -1/ for temperature tuning. Surface leakage currents are shown to have a major effect on the operating characteristics of these and other Pb-salt devices. Results provide evidence for high internal quantum efficiencies and indicate that free carrier absorption is an important factor limiting power output in Pb-salt lasers. Observations of spectral mode behavior as a function of bias current are consistent with Zee's gain saturation model.

• Research Organization: Butler Research and Engineering, Inc., Lexington, MA
• OSTI ID: 5051224
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 19:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CONFIGURATION
DESIGN
EFFICIENCY
LASERS
LEAD COMPOUNDS
LEAD SELENIDES
PERFORMANCE
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TIN COMPOUNDS
TIN SELENIDES
TUNING