A new doping technique for high throughput solar cell fabrication

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5050689

Hecht, H D; Hoerscheimann, K A; Munzer, K A

Various doping techniques such as gas diffusion, paint-on methods, ion implantation, and screen printing are customarily used in silicon solar cell fabrication. This paper presents a new technique, called plasma doping, as a low cost approach suitable for high throughput production. The method is based on a high-frequency low-pressure plasma of a dopant gas. Accelerating the dopant ions onto the silicon wafers by means of an additional electrical field a high doped surface layer is created. The technical process, successfully applied with phosphorus and with boron based dopants, is described. The properties of plasma-doped 100 mm diameter monocrystalline silicon solar cells are demonstrated.

• Research Organization: Siemens AG, Frankfurter Ring 152, D-8000 Munchen
• OSTI ID: 5050689
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BORON
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
NONMETALS
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT