Amphoteric substitutionality and lattice distortion of Ge in InP

Journal Article · Mon Mar 21 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111886· OSTI ID:5046617

Yu, K M; Moll, A J; Walukiewicz, W ^[1]; Derhacobian, N; Rossington, C ^[2]

---

1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Engineering Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We have studied the electrical and structural properties of InP implanted with Ge ions (2[times]10[sup 15]/cm[sup 2]). The implantation was performed at both room temperature (RT) and liquid nitrogen temperature (LNT). After annealing at 850 [degree]C for 5 s, both sets of samples exhibited [ital n]-type conductivity. The [ital n]-type activation efficiency in the RT implanted sample was about a factor of 2 higher than that in the LNT sample (15% and 8%, respectively). Extended x-ray absorption fine structure spectroscopy (EXAFS) shows direct evidence of the amphoteric substitutionality of the Ge atoms in InP for both samples. The ratios of Ge on In sites to Ge on P sites, derived from the EXAFS results, are consistent with the electrical behavior of the samples. The EXAFS results also reveal that the Ge---In and Ge---P bond lengths in the RT sample are very similar to their theoretical values, but are very different from the original In---P bond length. A relaxation in the Ge---In bond is observed in the LNT sample, resulting in a Ge---In bond length very similar to the original In---P bond length.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5046617
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:12; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360606 -- Other Materials-- Physical Properties-- (1992-)
BOND LENGTHS
CHARGED PARTICLES
DIMENSIONS
ELECTRICAL PROPERTIES
GERMANIUM IONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
LENGTH
MATERIALS
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS