Copper acceptors in uniaxially stressed germanium: 1[ital s][sup 3] to 1[ital s][sup 2] 2[ital s][sup 1] ground-state transformation

Journal Article · Mon Apr 04 00:00:00 EDT 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.72.2231· OSTI ID:5042933

Dubon, O D; Beeman, J W; Falicov, L M; Fuchs, H D; Haller, E E; Wang, C ^[1]

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1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States) Lawerence Berkeley Laboratory, Berkeley, California 94720 (United States) Department of Physics, University of California, Berkeley, California 94720 (United States)

We have studied uniaxially stressed Ge doped with Cu, a substitutional triple acceptor, by photoconductivity spectroscopy. We find that the ground state of this triple acceptor, normally accommodating three 1[ital s] holes, reconfigures into an atomic Li-like 1[ital s][sup 2] 2[ital s][sup 1] arrangement by the application of [100] stress. Above 4 kbar the first ionization potential reaches a constant value of 17.4 meV corresponding to the hole excitation from the now partially occupied 2[ital s] energy level. Excellent agreement was obtained between the experimental results and variational calculations.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5042933
• Journal Information: Physical Review Letters; (United States), Vol. 72:14; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
ELECTRONIC STRUCTURE
COPPER ADDITIONS
DOPED MATERIALS
GROUND STATES
IMPURITIES
PHOTOCONDUCTIVITY
STRESSES
ALLOYS
COPPER ALLOYS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY LEVELS
MATERIALS
METALS
PHYSICAL PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)