Signal formation in a-Si:H particle detectors
- Montreal Univ., PQ (Canada). Lab. de Physique Nucleaire
- Thomson and Nielsen Electronics Ltd., Ottawa (CA)
- Lab. de Physique de Interfacs et des Couches Minces, UPR258 CNRS, Ecole Polytechnique, 91128 Palaiseau (FR)
This paper presents the response of an hydrogenated amorphous silicon thin film p-i-n diode to protons as a function of the applied bias. A typical pulse shape is also presented. These data are understood on the basis of a model whose main features are fast ({lt}5 nsec) electron collection and slow (few {mu}sec) hole collection due to multiple trapping transport through the shallow gap states. The overall charge normalization yields a means pair creation energy {epsilon}p of 3.4 - .4 eV, comparable to 3.63 eV in crystalline Silicon despite the large 1.7 eV gap. To understand this result, a microscopic Monte Carlo calculation, taking into account the actual density of states in a-Si:H, is used to study the energy sharing between ionization and phonon production during hot carrier thermalization. This simulation yields a value of 4.3 eV for {epsilon}p.
- OSTI ID:
- 5039301
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:2; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
RADIATION DETECTORS
RESPONSE FUNCTIONS
SIGNAL CONDITIONING
SIMULATION
MONTE CARLO METHOD
PHONONS
PROTON DETECTION
PULSE TECHNIQUES
SI SEMICONDUCTOR DETECTORS
SILANES
SILICON DIODES
THIN FILMS
TRAPPING
CHARGED PARTICLE DETECTION
DETECTION
FILMS
FUNCTIONS
HYDRIDES
HYDROGEN COMPOUNDS
MEASURING INSTRUMENTS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
QUASI PARTICLES
RADIATION DETECTION
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
440100* - Radiation Instrumentation