Integrated FET and charge reset device for gamma spectrometers

Journal Article · Mon Apr 01 00:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.289266· OSTI ID:5039042

Nashashibi, T ^[1]; Sangsingkeow, P ^[2]

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1. Link Analytical Ltd., Halifax Road, High Wycombe, Buckinghamshire HP12 3SE (GB)
2. Tennelec, Inc., Oak Ridge, TN (United States)

This paper reports on a specially designed and processed five-terminal device incorporating a low noise field effect transistor and an integrated charge restoration mechanism used with an HPGe coaxial detector to produce a high rate, high resolution gamma spectrometer. A controlled charge pulse is injected into the FET channel and then collected by the gate to discharge the feedback capacitor and reset the amplifier. The reset time is fast and the high resolution is maintained at energy rate products in excess of 10{sup 11} eV/s. The FET input capacitance is 8 pF and the noise voltage is 0.45 nV/sq. root Hz at optimum temperature, When it is used with a 22 pF HPGe n-type coaxial detector the total pulser noise is 420 eV at 12 {mu}s amplifier peaking time.

• OSTI ID: 5039042
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:2; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
ELECTRONIC EQUIPMENT
PERFORMANCE
GAMMA SPECTROMETERS
CHARGE RENORMALIZATION
FIELD EFFECT TRANSISTORS
HIGH-PURITY GE DETECTORS
RESOLUTION
EQUIPMENT
GE SEMICONDUCTOR DETECTORS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RENORMALIZATION
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SPECTROMETERS
TRANSISTORS
440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)